IRFPS3810PbF mosfet equivalent, hexfet power mosfet.
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IRFPS3810PbF
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
PD - 95703
IRFPS3810PbF
HEXFET® Power MOSFET
D
VDSS = 100V RDS(on) = 0.009Ω S ID = 170A
Super-247™
Absolute Maximum .
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power.
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